CPO Application

Laser Die Eutectic Bonding System

HP-EB3300
Features
Supports multi-die and flip-chip eutectic bonding (including hybrid adhesive process)
High-response heater with multi-stage PID and predictive control
Real-time display of displacement, temperature, and pressure curves
Dual bonding-table operation for high productivity
Air-floating motion platform for long-term accuracy
Rotatable dispensing system and adaptive bonding nozzle design

Description

The HP-EB3300 is a high-precision laser die eutectic bonding system designed for optoelectronic and semiconductor packaging. Featuring a dual bonding-table design, it supports single-die, flip-chip, and multi-die eutectic processes. Integrated with high-response temperature sensors and multi-stage PID control, it provides real-time monitoring of displacement, temperature, and pressure. The air-floating motion platform ensures long-term accuracy and stability.
Specifications
Bonding Method High-precision bonding with feature side facing up (option: feature side facing down)
Bonding Process Eutectic bonding and silver-epoxy bonding
Application
COC、COS
Placement Accuracy ±1 μm (standard die); ±3 μm (depending on application)
XY Motion (Loading/Unloading Platform) Travel: 550 mm × 400 mm; Repeatability: 2.0 μm
XY Motion (Bonding Axis Stage) Travel: 250 mm × 100 mm; Repeatability: 0.5 μm
Rotation Axis Travel: 0° – 200°; Repeatability: 0.036°
Bonding Force
10 – 200 g(10 – 2000 g optional)
Productivity 25 s – 32 s(per device, depending on applicatio)
Bonding Area 13.0 mm × 13.0 mm
Chip Size Min: 0.15 mm × 0.2 mm; Max: 3.0 mm × 8.0 mm
Feeding Method
2 × “Gel-pak” and 8-inch Wafer ring
Substrate Size
Min: 0.3 mm × 0.3 mm; Max: 12.0 mm × 12.0 mm
Feeding Method
2 × “Gel-pak” and 8 吋 Wafer ring
Weight Approx. 2000 kg
Ambient Temperature Room temp. 22 °C ± 2 °C
Humidity
50 % ± 5 %
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